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K4R881869M Datasheet, PDF (47/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M
Preliminary
Direct RDRAM™
Table 19: Timing Conditions
Symbol
tDR2, tDF2
tCYCLE1
tCH1, tCL1
tS1
tH1
tS2
tH2
tS3
tH3
tS4
tH4
vIL,CMOS
vIH,CMOS
tNPQ
tREADTOCC
tCCSAMTOREAD
tCE
tCD
tFRM
tNLIMIT
tREF
tCCTRL
tTEMP
tTCEN
tTCAL
tTCQUIET
tPAUSE
Parameter
Min
Max
CMD, SCK input rise and fall times
SCK cycle time - Serial control register transactions
SCK cycle time - Power transitions
SCK high and low times
CMD setup time to SCK rising or falling edgee
CMD hold time to SCK rising or falling edgee
SIO0 setup time to SCK falling edge
SIO0 hold time to SCK falling edge
PDEV setup time on DQA5..0 to SCK rising edge.
PDEV hold time on DQA5..0 to SCK rising edge.
ROW2..0, COL4..0 setup time for quiet window
ROW2..0, COL4..0 hold time for quiet windowf
CMOS input low voltage - over/undershoot voltage duration is less
than or equal to 5ns
CMOS input high voltage - over/undershoot voltage duration is
less than or equal to 5ns
Quiet on ROW/COL bits during NAP/PDN entry
Offset between read data and CC packets (same device)
Offset between CC packet and read data (same device)
CTM/CFM stable before NAP/PDN exit
CTM/CFM stable after NAP/PDN entry
ROW packet to COL packet ATTN framing delay
Maximum time in NAP mode
Refresh interval
Current control interval
Temperature control interval
TCE command to TCAL command
TCAL command to quiet window
Quiet window (no read data)
RDRAM delay (no RSL operations allowed)
-
1000
10
4.25
1.25
1
40
40
0
5.5
-1
5
- 0.7
VCMOS/2
+ 0.4
4
12
8
2
100
7
34 tCYCLE
150
2
140
2.0
-
-
-
-
-
-
-
-
-
-
-
VCMOS/2 -
0.4
VCMOS +
0.7
-
-
-
-
-
-
10.0
32
100ms
100
-
2
-
200.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCYCLE
tCYCLE
V
V
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
tCYCLE
µs
ms
ms/tCYCLE
ms
tCYCLE
tCYCLE
tCYCLE
µs
Figure(s)
Figure 56
Figure 56
Figure 56
Figure 56
Figure 56
Figure 56
Figure 56
Figure 56
Figure 48,
Figure 57
Figure 48
Figure 48
Figure 47
Figure 51
Figure 51
Figure 48
Figure 47
Figure 46
Figure 45
Figure 50
Figure 51
Figure 52
Figure 52
Figure 52
Figure 52
page 28
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b. This parameter also applies to a -800 or -711 part when operated with tCYCLE=3.33ns.
c. This parameter also applies to a -800 part when operated with tCYCLE=2.81ns.
d. tS,MIN and tH,MIN for other tCYCLE values can be interpolated between or extrapolated from the timings at the 3 specified tCYCLE values.
e. With VIL,CMOS=0.5VCMOS-0.4V and VIH,CMOS=0.5VCMOS+0.4V
f. Effective hold becomes tH4’=t H4+[PDNXA•64•t SCYCLE+tPDNXB,MAX]-[PDNX•256•t SCYCLE]
if [PDNX•256•t SCYCLE] < [PDNXA•64•t SCYCLE+tPDNXB,MAX]. See Figure 48.
Page 45
Rev. 0.9 Jan. 2000