K4R881869M Datasheet, PDF (57/64 Pages) Samsung semiconductor – 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869M
Preliminary
Direct RDRAM^™
Absolute Maximum Ratings
Table 23: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
- 0.3
V_DD+0.3
V
- 0.5
V_DD+1.0
V
- 50
100
°C
I_DD - Supply Current Profile
Table 24: Supply Current Profile
I_DD value RDRAM blocks consuming power^a
I_DD,PDN
I_DD,NAP
I_DD,STBY
I_DD,ATTN
I_DD,ATTN-W
I_DD,ATTN-R
Self-refresh only for INIT.LSR=0
T/RCLK-Nap
T/RCLK, ROW-demux
T/RCLK, ROW-demux, COL-demux
T/RCLK, ROW-demux,COL-demux,DQ-demux,1•WR-SenseAmp, 4•ACT-
Bank
T/RCLK, ROW-demux,COL-demux,DQ-mux,1•RD-SenseAmp, 4•ACT-
Bank ^b
Max
-45
-800
TBD
TBD
TBD
TBD
TBD
TBD
Max
-45
-711
TBD
TBD
TBD
TBD
TBD
TBD
Max
-53.3
-600
TBD
TBD
TBD
TBD
TBD
TBD
Unit
µA
mA
mA
mA
mA
mA
a. The CMOS interface consumes power in all power states.
b. This does not include the IOL sink current. The RDRAM dissipates IOL•VOL in each output driver when a logic one is driven.
Page 55
Rev. 0.9 Jan. 2000