4524 Datasheet, PDF (154/161 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4524 Group
ELECTRICAL CHARACTERISTICS 2
(Mask ROM version: Ta = –20 °C to 85 °C, VDD = 2 to 5.5 V, unless otherwise noted)
(One Time PROM version: Ta = –20 °C to 85 °C, VDD = 2.5 to 5.5 V, unless otherwise noted)
Symbol
Parameter
Test conditions
IDD
Supply current at active mode
VDD = 5 V
f(STCK) = f(XIN)/8
(with a ceramic resonator) f(XIN) = 6 MHz
f(STCK) = f(XIN)/4
f(XCIN) = 32 kHz
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
VDD = 5 V
f(STCK) = f(XIN)/8
f(XIN) = 4 MHz
f(STCK) = f(XIN)/4
f(XCIN) = 32 kHz
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
VDD = 3 V
f(STCK) = f(XIN)/8
f(XIN) = 4 MHz
f(STCK) = f(XIN)/4
f(XCIN) = 32 kHz
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
at active mode
VDD = 5 V
f(STCK) = f(XIN)/8
(with a quartz-crystal
f(XIN) = stop
f(STCK) = f(XIN)/4
oscillator)
f(XCIN) = 32 kHz
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
VDD = 3 V
f(STCK) = f(XIN)/8
f(XIN) = stop
f(STCK) = f(XIN)/4
f(XCIN) = 32 kHz
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
at clock operation mode f(XCIN) = 32 kHz
VDD = 5 V
(POF instruction execution)
VDD = 3 V
at RAM back-up mode Ta = 25 °C
(POF2 instruction execution) VDD = 5 V
VDD = 3 V
RPU
Pull-up resistor value
VI = 0 V
VDD = 5 V
P0, P1, RESET
VDD = 3 V
VT+ – VT– Hysteresis
VDD = 5 V
SCK, SIN, CNTR0, CNTR1, INT0, INT1
VDD = 3 V
VT+ – VT– Hysteresis RESET
VDD = 5 V
VDD = 3 V
f(RING) On-chip oscillator clock frequency
VDD = 5 V
VDD = 3 V
∆f(XIN) Frequency error
VDD = 5 V ± 10 %, Ta = 25 °C
(with RC oscillation,
error of external R, C not included )
VDD = 5 V ± 10 %, Ta = 25 °C
(Note)
RCOM
COM output impedance
VDD = 5 V
VDD = 3 V
RSEG
SEG output impedance
VDD = 5 V
VDD = 3 V
RVLC
Internal resistor for LCD power supply
When dividing resistor 2r ✕ 3 selected
When dividing resistor 2r ✕ 2 selected
When dividing resistor r ✕ 3 selected
When dividing resistor r ✕ 2 selected
Note: When RC oscillation is used, use the external 33 pF capacitor (C).
Limits
Unit
Min. Typ. Max.
1.4 2.8 mA
1.6 3.2
2
4
2.8 5.6
1.1 2.2 mA
1.2 2.4
1.5 3
2
4
0.4 0.8 mA
0.5 1
0.6 1.2
0.8 1.6
55 110 µA
60 120
65 130
70 140
12 24 µA
13 26
14 28
15 30
20 60 µA
5
15
0.1
1
µA
10
6
30 60 125 kΩ
50 120 250
0.2
V
0.2
1
V
0.4
1
2
3 MHz
0.5
1
1.8
±17 %
±17
1.5 7.5 kΩ
2
10
1.5 7.5 kΩ
2
10
300 480 960 kΩ
200 320 640
150 240 480
100 160 320
Rev.2.00 Jul 27, 2004 page 154 of 159
REJ03B0091-0200Z