4571 Datasheet, PDF (122/126 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4571 Group
Electrical characteristics
Table 28 Electrical characteristics 1 (Ta = –20 °C to 85 °C, VDD = 1.8 to 5.5 V, unless otherwise noted)
Symbol
Parameter
Test conditions
VOH
“H” level output voltage P3, D0–D4
CNTR0
VDD = 5V
VDD = 3V
VOH
“H” level output voltage C
CNTR1
VDD = 5V
VDD = 3V
VOL
“L” level output voltage P0, P1, P2, P3, D0–D4
VDD = 5V
RESET, C, CNTR0, CNTR1
VDD = 3V
IIH
IIL
RPU
VT+ −VT−
VT+ −VT−
IDD
“H” level input current
“L” level input current
Pull-up resistor value
Hysteresis
Hysteresis
Supply current
P0, P1, P2, P3, D0–D4, K
RESET, INT0, INT1
CNTR0
P0, P1, P2, P3, D0–D4, K
RESET, INT0, INT1
CNTR0
P0, P1, P2
RESET
RESET, INT0, INT1
CNTR0
at active mode
(with a ceramic resonator)
(Note 1)
VI = VDD
VI = 0V
P0, P1, P2
No pull-up
VI = 0V
VDD = 5V
VDD = 3V
VDD = 5V
VDD = 3V
VDD = 5V
f(XIN) = 6MHz
f(RING) = stop
VDD = 3V
f(XIN) = 4MHz
f(RING) = stop
at RAM back-up mode
Ta = 25°C
(POF instruction execution) _{VDD = 5V}
VDD = 3V
Note 1.The voltage drop detection circuit operation current (IRST) is added.
IOH = −10mA
IOH = −3mA
IOH = −5mA
IOH = −1mA
IOL = −20mA
IOL = −6mA
IOL =−10mA
IOL = −3mA
IOL = 15mA
IOL = 5mA
IOL = 9mA
IOL = 3mA
VDD = 5V
VDD = 3V
f(STCK) = f(XIN)/8
f(STCK) = f(XIN)/4
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
f(STCK) = f(XIN)/8
f(STCK) = f(XIN)/4
f(STCK) = f(XIN)/2
f(STCK) = f(XIN)
Limits
Unit
Min. Typ. Max.
3
V
4.1
2.1
2.4
3
V
4.1
2.1
2.4
2V
0.9
1.4
0.9
2 µA
−2 µA
30 60 125 kΩ
50 120 250
1
V
0.4
0.2
V
0.2
1.2 2.4 mA
1.3 2.6
1.6 3.2
2.2 4.4
0.3 0.6 mA
0.4 0.8
0.6 1.2
0.8 1.6
0.1 3 µA
10
6
Rev.1.02 May 25, 2007 Page 122 of 124
REJ03B0179-0102