RX634 Datasheet, PDF (101/106 Pages) Renesas Technology Corp – 54 MHz 32-bit RX MCU with FPU, 90 DMIPS, up to 2-Mbyte flash memory

RX634 Group
5. Electrical Characteristics
5.9 E2 DataFlash (Flash Memory for Code Storage) Characteristics
Table 5.39 E2 DataFlash Characteristics (1)
Conditions 1: VCC = AVCC0 = VREFH0 = 2.7 to 3.6 V, VREFH = 2.7 V to AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Conditions 2: VCC = AVCC0 = VREFH0 = 4.0 to 5.5 V, VREFH = 4.0 V to AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0 V
Temperature range for the programming/erasure operation: T_a = –40 to +85°C T_a is common to both conditions 1 and 2.
Item
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Reprogramming/erasure cycle*¹
N_DPEC
100000
—
Data hold time
t_DDRP
30*²
—
—
Times
—
Year
T_a = +85°C
Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 8-byte programming is performed 16 times for different
addresses in 128-byte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This result is obtained from reliability testing.
Table 5.40 E2 DataFlash Characteristics (2)
Note: The standard values of the items with no conditions specified in the table are common to conditions 1 and 2.
Conditions 1: VCC = AVCC0 = VREFH0 = 2.7 to 3.6V, VREFH = 2.7V to AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0V
Conditions 2: VCC = AVCC0 = VREFH0 = 4.0 to 5.5V, VREFH = 4.0V to AVCC0, VSS = AVSS0 = VREFL = VREFL0 = 0V
Temperature range for the programming/erasure operation: T_a = –40 to +85°C T_a is common to both conditions 1 and 2.
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 32 MHz
Item
Symbol Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Programming time
when N_PEC ≤ 100 times
2 bytes
t_DP2
—
0.7
6
—
0.25
2
ms
Programming time
when N_PEC > 100 times
2 bytes
t_DP2
—
0.7
6
—
0.25
2
ms
Erasure time
when N_PEC ≤ 100 times
32 bytes
t_DE32
—
4
40
—
2
20
ms
Erasure time
when N_PEC > 100 times
32 bytes
t_DE32
—
Blank check time
2 bytes
t_DBC2
—
Suspend delay time during programming
t_DSPD
—
First suspend delay time during erasing
t_DSESD1
—
(in suspend priority mode)
7
40
—
—
100
—
—
250
—
—
250
—
4
20
ms
—
30
μs
—
120
μs
—
120
μs
Second suspend delay time during erasing t_DSESD2
—
(in suspend priority mode)
—
500
—
—
300
μs
Suspend delay time during erasing
(in erasure priority mode)
t_DSEED
—
—
500
—
—
300
μs
R01DS0255EJ0100 Rev.1.00
Feb 25, 2015
Page 101 of 106