PIC18F2331_10 Datasheet, PDF (82/392 Pages) Microchip Technology – 28/40/44-Pin Enhanced Flash Microcontrollers with nanoWatt Technology, High-Performance PWM and A/D

PIC18F2331/2431/4331/4431
7.7 Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
Configuration Words. External read and write opera-
tions are disabled if either of these mechanisms are
enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect Configuration bit. Refer to Section 23.0
“Special Features of the CPU” for additional
information.
7.8 Protection Against Spurious Write
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM memory
are blocked during the Power-up Timer period (TPWRT,
Parameter 33).
The write/initiate sequence, and the WREN bit
together, help prevent an accidental write during
Brown-out Reset, power glitch or software malfunction.
7.9 Using the Data EEPROM
The data EEPROM is a high-endurance, byte-
addressable array that has been optimized for the
storage of frequently changing information (e.g.,
program variables or other data that are updated
often). Frequently changing values will typically be
updated more often than Specification D124. If this is
not the case, an array refresh must be performed. For
this reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
Note:
If data EEPROM is only used to store con-
stants and/or data that changes rarely, an
array refresh is likely not required. See
Specification D124.
EXAMPLE 7-3: DATA EEPROM REFRESH ROUTINE
LOOP
Required
Sequence
CLRF
BCF
BCF
BCF
BSF
EEADR
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
LOOP
; Start at address 0
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
BCF
EECON1, WREN ; Disable writes
BSF
INTCON, GIE ; Enable interrupts
DS39616D-page 82
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