PIC18FXX20 Datasheet, PDF (321/366 Pages) Microchip Technology – 64/80-Pin High Performance 1 Mbit Enhanced FLASH Microcontrollers with A/D

PIC18FXX20
TABLE 26-4: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D110
D112
D113
VPP
IPP
IDDP
Internal Program Memory
Programming Specifications
(Note 1)
Voltage on MCLR/VPP pin
Current into MCLR/VPP pin
Supply Current during
Programming
9.00
—
—
—
13.25 V (Note 2)
—
5
µA
—
10 mA
Data EEPROM Memory
D120 ED Cell Endurance
100K
1M
— E/W -40°C to +85°C
D120A ED Cell Endurance
10K
100K
— E/W +85°C to +125°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
—
ms
D123 TRETD Characteristic Retention
40
—
— Year -40°C to +85°C (Note 3)
D123A TRETD Characteristic Retention
100
—
— Year 25°C (Note 3)
Program FLASH Memory
D130 EP Cell Endurance
10K 100K
— E/W -40°C to +85°C
D130A EP Cell Endurance
1000 10K
— E/W +85°C to +125°C
D131 VPR VDD for Read
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5 V Using ICSP port
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5 V Using ICSP port
or Write
D132B VPEW VDD for Self-timed Write
VMIN
—
5.5
V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
—
5
—
ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
—
—
ms VDD > 4.5V
(externally timed)
D133A TIW Self-timed Write Cycle Time
—
2.5
—
ms
D134 TRETD Characteristic Retention
40
—
— Year -40°C to +85°C (Note 3)
D134A TRETD Characteristic Retention
100
—
— Year 25°C (Note 3)
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: These specifications are for programming the on-chip program memory through the use of Table Write
instructions.
2: The pin may be kept in this range at times other than programming, but it is not recommended.
3: Retention time is valid, provided no other specifications are violated.
 2003 Microchip Technology Inc.
Advance Information
DS39609A-page 319