1EDI2001AS_15 Datasheet, PDF (68/135 Pages) Infineon Technologies AG – Single Channel Isolated Driver for Inverter Systems AD Step

3.5
Protection Functions: Category D
EiceDRIVER™ SIL
1EDI2001AS
Protection and Diagnostics
3.5.1 Operation in Verification Mode and Weak Active Mode
Verification Mode and Weak Active Mode are used to start intrusive test functions on device and system level, in
order to verify during life time safety relevant functions. The following functions are supported in Verification and
Weak Active Mode:
• Weak Turn-On
• DESAT Supervision Level 1
• DESAT Supervision Level 2
• DESAT Supervision Level 3
• OCP Supervision Level 1
• OCP Supervision Level 3
• UVLOx and OVLOx Supervision Level 1
• Internal Clock Supervision
• Timing Calibration Feature
Intrusive test functions can only be started once a correct sequence of SPI commands has been received after
reset. The implementation of the device ensures that no intrusive function can be started when the device is
normally active.
A time-out function ensures that the device quits OPM5 or OPM6 to OPM1 after a hardware defined time.
The verification functions are triggered by setting the corresponding bit fields in registers PSCR or SSCR in OPM2.
The settings are then activated in OPM5. Only one verification function should be activated at the time.
In OPM5 and OPM6, Gate Monitoring for High level and Output Stage Monitoring on pin TON are disabled
Note: In OPM5 and OPM6 mode, it is recommended to have bit field SSTTOF.STVAL programmed to 0_H.
3.5.2
Weak Turn On
The Weak-Turn On (WTO) corresponds to the operation when Mode OPM6 is active.
The purpose of the Weak Turn-On functionality is to perform a “probe” test of the IGBT, by switching it on with a
reduced gate voltage, in order to limit the current through it in case of overcurrent conditions. This allows to avoid
high currents when the system has no memory of the previous state.
In Mode OPM6, when the driver initiates a turn-on sequence after the reception of a PWM command, the ON
voltage at signal TON is defined by bit field SCTRL.GPONS. Figure 3-9 shows an idealized weak turn-on
sequence.
The device allows for external booster voltage compensation at the IGBT gate. When bit SCFG2.VBEC is cleared,
the voltage at TON at the plateau corresponds to the programmed value. When bit SCFG2.VBEC is set, an
additional V_BE (base emitter junction voltage of an internal pn diode) is substracted to the programmed voltage at
TON in order to compensate for the V_BE of an external booster.
Note: When using WTO, it is recommended to have the selected TTOFF (if active) plateau at a smaller voltage
than the WTO voltage.
Datasheet
68
Hardware Description
Rev. 3.1, 2015-07-30