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TMDS171 Datasheet, PDF (5/62 Pages) Texas Instruments – 3.4 Gbps TMDS RETIMER
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NAME
A1
PIN
NO.
27
TX_TERM_CTL
36
SWAP/POL
NC
1
18, 40
TMDS171, TMDS171I
SLLSEN7A – OCTOBER 2015 – REVISED DECEMBER 2015
Pin Functions (continued)
I/O (1)
I
I
3-Level
I
3-Level
–
DESCRIPTION
High address bit 2 for I2C programming
Weak internal pull down.
Note: When I2C_EN/PIN = Low for Pin Strapping Mode leave this pin as No connect
Transmit Termination Control
TX_TERM_CTL = H: No transmit Termination
TX_TERM_CTL = L: 150 - 300 Ω
TX_TERM_CTL = No Connect: Automatically selects the termination impedance
2 Gbps > DR ≤ 3.4 Gbps – 150 - 300 Ω differential near end termination
DR < 2 Gbps – no termination
Note: If left floating; the device will be in Automatic Select Mode. DR stands for Data Rate
Receive Polarity Swap and Receive Lane Swap control pin
SWAP/POL = H: Receive Lanes Polarity Swap (Retimer Mode Only)
SWAP/POL = L: Receive Lanes (Retimer and Redriver Mode)
Swap SWAP/POL = No Connect, Normal Operation
No connect
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)(3)
Supply Voltage Range
Voltage Range
Input Current IIN
Continuous power dissipation
Storage temperature, Tstg
VCC
VDD
Main Link Input Differential Voltage (IN_Dx,
IN_CLKx); IIN = 15mA
TMDS Outpus ( OUT_Dx)
HPD_SRC, Vsadj, SDA_CTL, SCL_CTL, OE, A1,
PRE_SEL, EQ_SEL/A0, I2C_EN/PIN, SIG_EN,
TX_TERM_CTL,
HDP_SNK, SDA_SNK, SCL_SNK, SDA_SRC,
SCL_SRC
Main Link Input Differential Voltage (IN_Dx,
IN_CLKx);
MIN
–0.3
–0.3
VCC - 0.75 V
–0.3
MAX
4
1.4
VCC + 0.3 V
4
–0.3
4
–0.3
6
15
See Thermal Information
–65
150
UNIT
V
mA
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.
(3) Tested in accordance with JEDEC Standard 22, Test Method A114-B
6.2 ESD Ratings
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-
C101 (2)
VALUE
±2000
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
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