THS3217 Datasheet, PDF (4/73 Pages) Texas Instruments – THS3217 DC to 800-MHz, Differential-to-Single-Ended, DAC Output Amplifier

THS3217
SBOS766B – FEBRUARY 2016 – REVISED FEBRUARY 2016
7 Specifications
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7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
Voltage
Current
Temperature
Supply, +V_CC – (–V_CC)
Input/output
Differential input voltage (IN+ – IN–)
Continuous input current (IN+, IN–, VMID_IN, VIN+,
VIN–) ⁽²⁾
Continuous output current⁽²⁾
Operating, T_A
Junction, T_J
Storage, T_stg
MIN
(–V_CC) – 0.5
–55
–45
–65
MAX
16.2
(+V_CC) + 0.5
±8
±10
±30
105
150
150
UNIT
V
mA
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Long-term continuous current for electromigration limits.
7.2 ESD Ratings
V_(ESD)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Electrostatic discharge _{Charged-device model (CDM), per JEDEC specification JESD22-C101(2)}
VALUE
±1500
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
+V_CC
–V_CC
T_A
Positive supply voltage
Negative supply voltage
Operating free-air temperature
MIN
NOM
MAX UNIT
4
6
7.9
V
–4
–6
–7.9
V
–40
25
85
°C
7.4 Thermal Information
THERMAL METRIC⁽¹⁾
THS3217
RGV (VQFN)
UNIT
16 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
45
°C/W
45
°C/W
22
°C/W
1
°C/W
22
°C/W
4
°C/W
(1) Thermal impedance reported with backside thermal pad soldered to heat spreading plane. For more information about traditional and
new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
4
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