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C8051F50X_11 Datasheet, PDF (47/313 Pages) Silicon Laboratories – Mixed Signal ISP Flash MCU Family
C8051F50x/F51x
Table 5.6. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
IFCN = 111b;
VDD > VREGMIN1
24 – 0.5% 242 24 + 0.5%
Units
MHz
IFCN = 111b;
VDD < VREGMIN1
24 – 1.0% 242 24 + 1.0%
Oscillator Supply Current 
(from VDD)
Internal Oscillator Suspend
OSCICN[7:6] = 00b
ZTCEN = 1
Internal Oscillator On
OSCICN[7:6] = 11b
Temp = 25 °C
Temp = 85 °C
Temp = 125 °C
—
830
1300
µA
—
66
—
µA
—
110
—
—
190
—
Wake-up Time From Suspend OSCICN[7:6] = 00b
—
1
—
µs
Power Supply Sensitivity
Constant Temperature
—
0.10
—
%/V
Temperature Sensitivity3
Constant Supply
TC1
—
5.0
—
ppm/°C
TC2
—
–0.65
—
ppm/°C2
1. VREGMIN is the minimum output of the voltage regulator for its low setting (REG0CN: REG0MD = 0b). See
Table 5.8, “Voltage Regulator Electrical Characteristics,” on page 48.
2. This is the average frequency across the operating temperature range.
3. Use temperature coefficients TC1 and TC2 to calculate the new internal oscillator frequency using the
following equation:
f(T) = f0 x (1 + TC1 x (T – T0) + TC2 x (T – T0)2)
where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C.
Rev. 1.2
47