RX63N_15 Datasheet, PDF (191/210 Pages) Renesas Technology Corp – Renesas MCUs

RX63N Group, RX631 Group
5. Electrical Characteristics
5.12 E² Flash Characteristics
Table 5.38 E2 Flash Characteristics (1)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6V, VREFH0 = 2.7V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0V
Temperature range for the programming/erasure operation: T_a = T_opr
Item
Reprogram/erasure cycle*¹
Data hold time
Symbol
N_DPEC
t_DDRP
min
100000
30*²
typ
—
—
max
—
—
Unit
Times
Year
Condition
Ta = +85°C
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 128-byte programming is performed 16 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. The result obtained from the reliability test.
Table 5.39 E² Flash Characteristics (2)
Conditions: VCC = AVCC0 = VREFH = VCC_USB = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V
Temperature range for the programming/erasure operation: T_a = T_opr
Item
Programming time
N_PEC  100 times
2 bytes
Symbol
t_DP2
FCLK = 4 MHz
Min.
Typ.
Max.
—
0.7
6
20 MHz ≤ FCLK ≤ 50 MHz
Unit
Min.
Typ.
Max.
—
0.25
2
ms
Programming time
N_PEC > 100 times
2 bytes
t_DP2
—
0.7
6
—
0.25
2
ms
Erasure time
N_PEC  100 times
32 bytes
t_DE32
—
4
40
—
2
20
ms
Erasure time
N_PEC > 100 times
32 bytes
t_DE32
—
Blank check time
2 bytes
Suspend delay time during programming
First suspend delay time during erasure
(in suspend priority mode)
Second suspend delay time during erasure
(in suspend priority mode)
Suspend delay time during erasure
(in erasure priority mode)
t_DBC2
—
t_DSPD
—
t_DSESD1
—
t_DSESD2
—
t_DSEED
—
7
40
—
—
100
—
—
250
—
—
250
—
—
500
—
—
500
—
4
20
ms
—
30
μs
—
120
μs
—
120
μs
—
300
μs
—
300
μs
R01DS0098EJ0180 Rev.1.80
May 13, 2014
Page 191 of 208