English
Language : 

RX63N_15 Datasheet, PDF (134/210 Pages) Renesas Technology Corp – Renesas MCUs
RX63N Group, RX631 Group
5. Electrical Characteristics
Table 5.4 DC Characteristics (3) (for D and G Versions (-40 ≤ Ta ≤ +85°C))
Conditions: VCC = AVCC0 = VREFH = VCC_USB = VBATT = 2.7 to 3.6 V, VREFH0 = 2.7 V to AVCC0,
VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V, Ta = Topr
Item
Symbol Min. Typ. Max. Unit Test Conditions
RAM standby voltage
VCC rising gradient
VRAM
2.7 —
SrVCC 8.4 —
—
20000
V
µs/V
VCC falling gradient*8
SfVCC 8.4 — —
µs/V
Note 1. Supply current values are with all output pins unloaded and all input pull-up MOSs in the off state.
Note 2. Measured with clocks supplied to the peripheral functions. This does not include the BGO operation.
Note 3.
Note 4.
ICC depends on f (ICLK) as follows. (ICLK:PCLK:BCLK:BCLK pin = 8:4:4:2)
ICC Max. = 0.87 × f + 13 (max. operation in high-speed operating mode)
ICC Typ. = 0.35 × f + 5 (normal operation in high-speed operating mode)
ICC Typ. = 1.0 × f + 3 (low-speed operating mode 1)
ICC Max. = 0.53 × f + 12 (sleep mode)
This does not include the BGO operation.
Note 5. This is the increase for programming or erasure of the ROM or flash memory for data storage during program execution.
Note 6. Supply of the clock signal to peripherals is stopped in this state. This does not include the BGO operation.
Note 7. The reference power supply current is included in the power supply current value for 10-bit A/D conversion and D/A conversion.
Note 8. When VBATT is used
Note 9. The current values for 10-bit A/D converter and 10-bit D/A converter are included in the current from the VREFH pin.
Note 10. The values are the sum of IAVCC0 and IVREFH.
R01DS0098EJ0180 Rev.1.80
May 13, 2014
Page 134 of 208