MC68HC908GZ8 Datasheet, PDF (126/344 Pages) Motorola, Inc – Microcontrollers

Freescale Semiconductor, Inc.
FLASH Memory (FLASH)
11.3 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase
operations.
Address:
Read:
Write:
Reset:
$FE08
Bit 7
0
0
6
5
0
0
0
0
= Unimplemented
4
3
2
1
Bit 0
0
HVEN MASS ERASE PGM
0
0
0
0
0
Figure 11-1. FLASH Control Register (FLCR)
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for program
and erase operations in the array. HVEN can only be set if either PGM = 1 or
ERASE = 1 and the proper sequence for program or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 16-Kbyte FLASH array for mass erase
operation.
1 = MASS erase operation selected
0 = PAGE erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE is
interlocked with the PGM bit such that both bits cannot be equal to 1 or set to 1
at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. PGM is
interlocked with the ERASE bit such that both bits cannot be equal to 1 or set
to 1 at the same time.
1 = Program operation selected
0 = Program operation unselected
Data Sheet
126
FLASH Memory (FLASH)
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MC68HC908GZ8
MOTOROLA