PIC18F4539 Datasheet, PDF (269/322 Pages) Microchip Technology – Enhanced FLASH Microcontrollers with Single Phase Induction Motor Control Kernel

PIC18FXX39
TABLE 23-2: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D110
D113
VPP
IDDP
Internal Program Memory
Programming Specifications
Voltage on MCLR/VPP pin
Supply Current during
Programming
9.00
—
—
13.25 V
—
10 mA
D120
D121
ED
VDRW
Data EEPROM Memory
Cell Endurance
VDD for Read/Write
100K
1M
VMIN
—
D122 TDEW Erase/Write Cycle Time
—
D123 TRETD Characteristic Retention
40
D123A TRETD Characteristic Retention
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
Program FLASH Memory
D130 EP Cell Endurance
D131 VPR VDD for Read
100
1M
10K
VMIN
D132 VIE
D132A VIW
D132B VPEW
VDD for Block Erase
VDD for Externally Timed Erase
or Write
VDD for Self-timed Write
4.5
4.5
VMIN
D133 TIE ICSP Block Erase Cycle Time
—
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
D133A TIW Self-timed Write Cycle Time
—
D134 TRETD Characteristic Retention
40
D134A TRETD Characteristic Retention
100
4
—
—
10M
100K
—
—
—
—
4
—
2
—
—
— E/W -40°C to +85°C
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
—
ms
— Year Provided no other
specifications are violated
— Year 25°C (Note 1)
— E/W -40°C to +85°C
— E/W -40°C to +85°C
5.5
V VMIN = Minimum operating
voltage
5.5 V Using ICSP port
5.5 V Using ICSP port
5.5
V VMIN = Minimum operating
voltage
—
ms VDD ≥ 4.5V
—
ms VDD ≥ 4.5V
—
ms
— Year Provided no other
specifications are violated
— Year 25°C (Note 1)
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Retention time is valid, provided no other specifications are violated.
2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
 2002 Microchip Technology Inc.
Preliminary
DS30485A-page 267