82845G Datasheet, PDF (151/193 Pages) Intel Corporation – Intel 82845G/82845GL/82845GV Graphics and Memory Controller Hub (GMCH)

Electrical Characteristics
Table 6-6. DC Characteristics (Sheet 1 of 2)
Symbol
Signal
Group
Parameter
Min
Nom
Max
Unit
Notes
1.5 V AGP and Intel^® DVO Interface: Functional Operating Range (VCC=1.5 V ± 5%)
V_{IL_AGP}
V_{IH_AGP}
V_{OL_AGP}
V_{OH_AGP}
I_{LEAK_AGP}
C_{IN_AGP}
(a,b,w) AGP/DVO Input Low Voltage
(a,b,w) AGP/DVO Input High Voltage
(a,c,x) AGP/DVO Output Low Voltage
(a,c,x) AGP/DVO Output High Voltage
(a,b,w) AGP/DVO Input Leakage Current
(a,b,w) AGP/DVO Input Capacitance
–0.5
0.6VDDQ
0.85VDDQ
1.5 V Hub Interface: Functional Operating Range (VCC=1.5 V ± 5%)
0.4VDDQ
VDDQ+0.5
0.15VDDQ
±10
4
V
V
V Iol = 1 mA
V Ioh = -0.2 mA
µA 0<Vin<VCC1_5
pF F_C=1 MHz
V_{IL_HI}
V_{IH_HI}
V_{OL_HI}
V_{OH_HI}
I_{LEAK_HI}
C_{IN_HI}
(e) Hub Interface Input Low Voltage
-0.3
(e) Hub Interface Input High Voltage
HI_VREF+0.1
(e) Hub Interface Output Low Voltage
(e) Hub Interface Output High Voltage
0.6
(e) Hub Interface Input Leakage Current
(e) Hub Interface Input Capacitance
VTT DC Characteristics: Functional Operating Range (VTT= 1.15 V – 1.75 V)
HI_VREF–0.1 V
1.2
V
0.066
1.2
25
V I_OL= 1 mA
V I_OUT=0.7/RCOMP
µA
5
pF F_C=1 MHz
V_{IL_AGTL+}
V_{IH_AGTL+}
V_{OL_AGTL+}
V_{OH_AGTL+}
I_{OL_AGTL+}
I_{LEAK_AGTL+}
C_{PAD_AGTL+}
(g,h) Host AGTL+ Input Low Voltage
(g,h) Host AGTL+ Input High Voltage
(g,I) Host AGTL+ Output Low Voltage
(g,I) Host AGTL+ Output High Voltage
(g,I) Host AGTL+ Output Low Current
(g,h)
(g,h)
Host AGTL+ Input Leakage Current
Host AGTL+ Input
Capacitance
(2/3*VTT) –
0.1*GTLREF
(2/3*VTT) +
0.1*GTLREF
1/3*VTT–0.1 1/3*VTT 1/3*VTT+0.1
VTT–0.1
VTT
VTT_max /
0.75Rtt_min
± 10
V
V
V
V
mA Rtt_min=45 Ω
µA V_OL<Vpad<VTT
1
3.5
pF F_C=1 MHz
2.5 V DDR System Memory: Functional Operating Range (VCC=2.5 V±5%)
V_{IL_DDR(DC)}
V_{IH_DDR(DC)}
V_{IL_DDR(AC)}
V_{IH_DDR(AC)}
V_{OL_DDR}
V_{OH_DDR}
I_{Leak_DDR}
C_{IN_DDR}
(l,n) DDR Input Low Voltage
-0.1*VCC
(l,n) DDR Input High Voltage
SMVREF
(DDR) + 0.15
(l,n) DDR Input Low Voltage
–0.1*VCC
(l,n)
(l,m)
(l,m)
(l,n)
(l,n)
DDR Input High Voltage
DDR Output Low Voltage
DDR Output High Voltage
Input Leakage Current
DDR Input/Output Pin Capacitance
SMVREF
(DDR) + 0.31
1.9
SMVREF
(DDR) – 0.15
V
1.1*VCC
V
SMVREF
(DDR)–0.31
V
1.1*VCC
V
0.6
V IOL = 13 mA
V IOH = 13 mA
±10
uA
5.5
pF F_C=1 MHz
Intel^® 82845G/82845GL/82845GV GMCH Datasheet
151