PXS30 Datasheet, PDF (99/139 Pages) Freescale Semiconductor, Inc – PXS30 Microcontroller

Electrical characteristics
NOTES:
1 _{L  H signifies low-to-high propagation delay and H  L signifies high-to-low propagation delay.}
3.19.2 DRAM pads electrical specification (V_{DD_HV_DRAM} = 2.5 V)
Table 51. DRAM pads DC electrical specifications (V_{DD_HV_DRAM} = 2.5 V)
No.
Symbol
Parameter
Condition
Min
Max
Unit
1
V_{DD_HV_DRAM} SR I/O supply voltage
—
2.3
2.7
V
2 V_{DD_HV_DRAM_VREF} CC Input reference voltage
—
0.49 × V_{DD_HV_DRAM} 0.51 × V_{DD_HV_DRAM} V
3 V_{DD_HV_DRAM_VTT} CC Termination voltage¹
—
V_{DD_HV_DRAM_VREF} V_{DD_HV_DRAM_VREF} V
- 0.04
+ 0.04
4
V_IH
CC Input high voltage
—
V_{DD_HV_DRAM_VREF}
—
V
+ 0.15
5
V_IL
CC Input low voltage
—
—
V_{DD_HV_DRAM_VREF} V
– 0.15
6
V_OH
CC Output high voltage
ODT
V_{DD_HV_DRAM_VTT}
—
V
enabled²
+ 0.81
ODT 0.8 × V_{DD_HV_DRAM}
—
V
disabled³
7
V_OL
CC Output low voltage
ODT
—
V_{DD_HV_DRAM_VTT} V
enabled²
– 0.81
ODT
—
0.2 × V_{DD_HV_DRAM} V
disabled³
NOTES:
1 _{473 MAPBGA: Termination voltage can be supplied via package pins. 257 MAPBGA Termination voltage internally}
tied as the 257 MAPBGA does not provide DRAM interface. Disable ODT
2 _{Termination voltage is supplied by VDD_HV_DRAM_VTT.}
3 _{Tie VDD_HV_DRAM_VTT to VSS and disable ODT}
Table 52. Output drive current @ V_DDE = 2.5 V (±200 mV)
Pad Name
Drive Mode
Minimum I_OH (mA)¹
Minimum I_OL (mA)²
DRAM ACC
011
–16.2
16.2
DRAM DQ
011
DRAM CLK
011
NOTES:
1 _{IOH is defined as the current sourced by the pad to drive the output to VOH.}
2 _{IOL is defined as the current sunk by the pad to drive the output to VOL.}
PXS30 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
99