PXS30 Datasheet, PDF (100/139 Pages) Freescale Semiconductor, Inc – PXS30 Microcontroller

Electrical characteristics
Table 53. DRAM pads AC electrical specifications (V_{DD_HV_DRAM} = 2.5 V)
No.
Pad Name
Prop. Delay (ns)
L  H/H  L¹
Min
Max
Rise/Fall Edge (ns)
Min
Max
Drive
Load
(pF)
Drive/Slew
Rate Select
MSB, LSB
1
DRAM ACC
1.4/1.5
2.5/2.4
2.1/2.1
4.3/4.1
5
011
1.7/1.7
2.8/2.7
0.6/0.7
1.1/1.3
20
2
DRAM DQ
1.4/1.5
2.5/2.4
2.1/2.1
4.3/4.1
5
011
1.7/1.7
2.8/2.7
0.6/0.7
1.1/1.3
20
3
DRAM CLK
1.4/1.4
2.4/2.4
2.1/2.1
4.4/4.1
5
011
1.6/1.6
2.7/2.7
0.6/0.7
1.6/1.8
20
NOTES:
1 _{L  H signifies low-to-high propagation delay and H  L signifies high-to-low propagation delay.}
3.19.3 DRAM pads electrical specification (V_{DD_HV_DRAM} = 1.8 V)
Table 54. DRAM pads DC electrical specifications (V_{DD_HV_DRAM} = 1.8 V)
No.
Symbol
Parameter
Condition
Min
Max
Unit
1
V_{DD_HV_DRAM} SR I/O supply voltage
2 V_{DD_HV_DRAM_VREF} CC Input reference voltage
3 V_{DD_HV_DRAM_VTT} CC Termination voltage¹
—
1.7
1.9
V
—
0.49 × V_{DD_HV_DRAM} 0.51 × V_{DD_HV_DRAM} V
—
V_{DD_HV_DRAM_VREF} V_{DD_HV_DRAM_VREF}
– 0.04
+ 0.04
V
4
V_IH
CC Input high voltage
—
V_{DD_HV_DRAM_VREF}
—
+ 0.125
V
5
V_IL
CC Input low voltage
—
—
V_{DD_HV_DRAM_VREF}
– 0.125
V
6
V_OH
CC Output high voltage
ODT
V_{DD_HV_DRAM_VTT}
—
enabled²
+ 0.81
V
ODT 0.8 × V_{DD_HV_DRAM}
—
disabled³
V
7
V_OL
CC Output low voltage
ODT
enabled²
—
V_{DD_HV_DRAM_VTT}
– 0.81
V
ODT
disabled³
—
0.2 × V_{DD_HV_DRAM V}
NOTES:
1 _{BGA473: Termination voltage can be supplied via package pins. BGA257 Termination voltage internally tied as the}
BGA257 does not provide DRAM interface. Disable ODT
2 _{Termination voltage is supplied by VDD_HV_DRAM_VTT.}
3 _{Tie VDD_HV_DRAM_VTT to VSS and disable ODT}
PXS30 Microcontroller Data Sheet, Rev. 1
100
Preliminary—Subject to Change Without Notice
Freescale Semiconductor