PXS30 Datasheet, PDF (97/139 Pages) Freescale Semiconductor, Inc – PXS30 Microcontroller

Electrical characteristics
— All inputs are tolerant up to their VDD_HV_DRAM Absolute Maximum Rating
— Data and strobe pads can be configured to support four signal termination options
– Infinite/no termination
– 50 Ohms
– 75 Ohms
– 150 Ohms
The electrical data provided in Section 3.19, DRAM pad specifications,” applies to the pads listed in
Table 46.
Table 46. DRAM pads
Name
Voltage Used For
Notes¹
DRAM ACC 1.62 V–3.6 V I/O
Bidirectional DDR pad
DRAM CLK 1.62 V–3.6 V
O
Output only differential clock driver pad
DRAM DQ 1.62 V–3.6 V I/O
Bidirectional DDR pad with integrated ODT
NOTES:
1 _{All pads can be configured to support LPDDR half strength, LPDDR full strength, DDR1, DDR2 half}
strength, DDR2 full strength, and SDR.
All three pad types can be configured to support SDR, DDR, DDR2 half and full strength, and LPDDR
half and full strength modes, according to Table 47.
Table 47. Mode configuration for DRAM pads
Configuration¹
Mode
000
1.8 V LPDDR Half Strength
001
1.8 V LPDDR Full Strength
010
1.8 V DDR2 Half Strength
011
2.5 V DDR
100
Not supported
101
Not supported
110
1.8 V DDR2 Full Strength
111
SDR
NOTES:
1 _{Configuration is selected in the corresponding PCR registers of the SIUL.}
3.19.1 DRAM pads electrical specifications (V_{DD_HV_DRAM} = 3.3 V)
Table 48. DRAM pads DC electrical specifications (V_{DD_HV_DRAM} = 3.3 V)
No.
Symbol
Parameter
Condition
Min
Max
Unit
1 V_{DD_HV_DRAM} SR I/O supply voltage
—
3.0
2 V_{DD_HV_DRAM_VREF} CC Input reference
—
1.3
voltage
3.6
V
1.7
V
PXS30 Microcontroller Data Sheet, Rev. 1
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
97