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MC9S08JM16 Datasheet, PDF (353/386 Pages) Freescale Semiconductor, Inc – Microcontrollers
Appendix A Electrical Characteristics
Table 7. DC Characteristics (continued)
Num C
Parameter
Symbol Min Typical1
11 P Internal pullup resistors3
RPU
12 P Internal pulldown resistors4
RPD
13 T Internal pullup resistor to USBDP (to VUSB33)
Idle RPUPD
Transmit
14 D DC injection current5 6 7 8
Single pin limit
VIN > VDD
VIN < VSS IIC
Total MCU limit, includes sum of all stressed pins
VIN > VDD
VIN < VSS
20
20
900
1425
0
0
0
0
45
45
1300
2400
—
—
—
—
15 D Input capacitance; all non-supply pins
CIn
—
—
16 D RAM retention voltage
VRAM
—
0.6
17 D POR re-arm voltage
VPOR
0.9
1.4
18 D POR re-arm time
tPOR
10
—
Low-voltage detection threshold —
19 P High range
VDD falling VLVD1
3.9
4.0
VDD rising
4.0
4.1
Low-voltage detection threshold —
20 P Low range
VDD falling VLVD0
VDD rising
2.48
2.54
2.56
2.62
Low-voltage warning threshold —
21 P High range 1
VDD falling VLVW3
4.5
4.6
VDD rising
4.6
4.7
Low-voltage warning threshold —
22 C High range 0
VDD falling VLVW2
4.2
4.3
VDD rising
4.3
4.4
Low-voltage warning threshold
23 P Low range 1
VDD falling VLVW1
VDD rising
2.84
2.90
2.92
2.98
Low-voltage warning threshold —
24 C Low range 0
VDD falling VLVW0
VDD rising
2.66
2.72
2.74
2.80
Low-voltage inhibit reset/recover hysteresis
25 T
+5 V Vhys
—
100
+3 V
—
60
26
C
Bandgap voltage reference
factory trimmed at VDD = 5.0 V, Temp = 25°C
VBG
1.19
1.20
1 Typical values are based on characterization data at 25°C unless otherwise stated.
2 Maximum is highest voltage that POR is guaranteed.
Max.
65
65
1575
3090
2
–0.2
25
–5
8
1.0
2.0
—
4.1
4.2
2.64
2.70
4.7
4.8
4.4
4.5
3.00
3.06
2.82
2.88
—
—
1.21
Unit
kΩ
kΩ
kΩ
mA
mA
pF
V
V
μs
V
V
V
V
V
V
mV
mV
V
MC9S08JM16 Series Data Sheet, Rev. 2
Freescale Semiconductor
353