1GB-DDR3L-AS4C64M16D3L Datasheet, PDF (7/90 Pages) Alliance Semiconductor Corporation – JEDEC Standard Compliant

1Gb DDR3L – AS4C64M16D3L
LDM,
UDM
Input Data Input Mask: Input data is masked when DM is sampled HIGH during a write cycle.
LDM masks DQ0-DQ7, UDM masks DQ8-DQ15.
DQ0 - DQ15 Input / Data I/O: The data bus input and output data are synchronized with positive and negative
Output edges of DQS/DQS#. The I/Os are byte-maskable during Writes.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to
the DDR3L SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS#. The ODT
pin will be ignored if Mode-registers, MR1and MR2, are programmed to disable RTT.
RESET#
Input
Active Low Asynchronous Reset: Reset is active when RESET# is LOW, and inactive
when RESET# is HIGH. RESET# must be HIGH during normal operation. RESET# is a
CMOS rail to rail signal with DC high and low at 80% and 20% of VDD
VDD
Supply Power Supply: 1.35V -0.067V/+0.1V.
VSS
Supply Ground
VDDQ
Supply DQ Power: 1.35V -0.067V/+0.1V.
VSSQ
Supply DQ Ground
VREFCA
Supply Reference voltage for CA
VREFDQ
Supply Reference voltage for DQ
ZQ
Supply Reference pin for ZQ calibration.
NC
- No Connect: These pins should be left unconnected.
Confidential
7
Rev. 2.0
Aug. /2014