1GB-DDR3L-AS4C64M16D3L Datasheet, PDF (45/90 Pages) Alliance Semiconductor Corporation – JEDEC Standard Compliant

1Gb DDR3L – AS4C64M16D3L
READ Timing Definitions
Read timing is shown in the following figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, CK#. tDQSCK is the
actual position of a rising strobe edge relative to CK, CK#. tQSH describes the DQS, DQS# differential output high
time. tDQSQ describes the latest valid transition of the associated DQ pins. tQH describes the earliest invalid
transition of the associated DQ pins.
Falling data strobe edge parameters:
tQSL describes the DQS, DQS# differential output low time. tDQSQ describes the latest valid transition of the
associated DQ pins. tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
Figure 18. READ timing Definition
CK#
CK
t_DQSCK,min
t_DQSCK,max
t_DQSCK,min
t_DQSCK,max
Rising Strobe
Region
t_DQSCK
t_QSH
DQS#
DQS
Associated
DQ Pins
t_QH
t_DQSQ
Rising Strobe
Region
t_DQSCK
t_QSL
t_QH
t_DQSQ
Confidential
45
Rev. 2.0
Aug. /2014