K4C89363AF Datasheet, PDF (8/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
DC Characteristics and Operating Conditions (Vdd = 2.5V ± 0.125V, VddQ = 1.8V ± 0.1V, Ta = 0~70 °C)
Parameter
Operating Current
t _CK = m i n , I _RC = m i n
Read/Write command cycling
O V < = V _IN< = V _IL(AC) ( m a x . ) V _IH(AC)( m i n . ) < = VIN < = V _DDQ
1 bank operation, Burst Length = 4
A d d r e s s c h a n g e u p t o 2 t i m e s d u r i n g m i n i m u m IRC.
Standby Current
t _CK = m i n , C S = V _IH, P D = V _IH ,
0 V < = V _IN< = V _IL(AC) ( m a x . ) V _IH(AC) ( m i n . ) < = V _IH < = VDDQ
All Banks : inactive state
O t h e r i n p u t s i g n a l s a r e c h a n g e d o n e t i m e d u r i n g 4 * tC _K
Standby (Power Down) Current
t _CK = m i n , C S = V _IH, P D = V _IL ( P o w e r D o w n )
0 V < = V _IN< = V _DDQ
All Banks : inactive state
Auto-Refresh Current
t _CK = m i n , I _REFC = m i n , t _REFI = m i n
Auto-Refresh command cycling
0 V < = V _IN< = V _IL( A C ) ( m a x . ) , V _IH( A C ) ( m i n . ) < = VIN < = V _DDQ
A d d r e s s c h a n g e u p t o 2 t i m e s d u r i n g m i n i m u m IR _{E F C.}
Self-Refresh Current
self-Refresh mode
P D = 0 . 2 V , O V < = VIN < = V _DDQ
Symbol
IDD1S
ID _{D 2 N}
IDD2P
I _DD5
I _DD6
F6
TBD
TBD
TBD
TBD
TBD
Max
FB
TBD
TBD
TBD
TBD
TBD
Units Notes
F5
TBD
1, 2
TBD
TBD
1
mA
1
TBD
1
TBD
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current
( 0 V < = V _IN< = V d d Q , A l l o t h e r p i n s n o t u n d e r t e s t = 0 V )
ILI
-5
5
uA
Output Leakage Current
( O u t p u t d i s a b l e d , 0 V < = VOUT< = V d d Q )
I _LO
-5
5
uA
V _REF C u r r e n t
IREF
-5
5
uA
Normal Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / V _OH = 1 . 4 2 0 V
Output Sink DC Current
V d d Q = 1 . 7 V / V _OL = 0 . 2 8 0 V
I _{O H(} D C )
-5.6
-
3
IOL ( D C )
5.6
-
3
Strong Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / V _OH = 1 . 4 2 0 V
Output Sink DC Current
V d d Q = 1 . 7 V / V _OL = 0 . 2 8 0 V
I _{O H(} D C )
IOL ( D C )
-9.8
9.8
-
3
mA
-
3
Weak Output Driver
Output Source DC Current
V d d Q = 1 . 7 V / V _OH = 1 . 4 2 0 V
Output Sink DC Current
V d d Q = 1 . 7 V / V _OL = 0 . 2 8 0 V
I _{O H(} D C )
-2.8
-
3
IOL ( D C )
2.8
-
3
N o t e s : 1 . T h e s e p a r a m e t e r s d e p e n d o n t h e c y c l e r a t e a n d t h e s e v a l u e s a r e m e a s u r e d a t a c y c l e r a t e w i t h t h e m i n i m u m v a l u e s o f t _{C K,} tRC a n d I _RC .
2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Regis ter.
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REV. 0.0 Nov. 2002