K4C89363AF Datasheet, PDF (51/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Functional Description (Continued)
Data Input/Output : DQ0 ~ DQ35
The input data of DQ0 to DQ35 are taken in synchronizing with the both edges of LDS/UDS input signal.
The output data of DQ0 to DQ35 are outputted synchronizing with the both edges of LQS/UQS output signal.
Data Strobe : DS(LDS/UDS) or QS(LQS/UQS)
Method of data strobe is chosen by Extended mode register.
(1) Unidirectional DS/QS mode
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation. Both edges of QS
are used for trigger signal of all DQs at Read operation. During Write, Auto-Refresh and NOP cycle, QS assert always "Low"
level. QS is Hi-Z in Self-Refresh mode.
(2) Unidirectional DS/Free running QS mode
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation. Both edges of QS
are used for trigger signal of all DQs at Read operation. QS assert always toggle signal except Self-Refresh mode. This strobe
type is easy to use for pin to pin connect application.
Power Supply : V _{D D}, V_DDQ, V _SS, V _SSQ
V _DD a n d V _SS a r e s u p p l y p i n s f o r m e m o r y c o r e a n d p e r i p h e r a l c i r c u i t s .
V _DDQ and V _SSQ are power supply pins for the output buffer.
Reference Voltage : V _REF
V_REF is reference voltage for all input signals.
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