K4C89363AF Datasheet, PDF (7/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Notes: 1. All voltages are referenced to Vss, VssQ.
2. V _REF is expected to track variations in VddQ DC level of the transmitting device.
Peak to peak AC noise on V _REF may not exceed ± 2% of V _REF (DC).
3. Overshoot Iimit : V _IH(max.) = VddQ + 0.7V with a pulse width <= 5ns
4 . U n d e r s h o o t I i m i t : V _{I L}( m i n . ) = - 0 . 7 V w i t h a p u l s e w i d t h < = 5 n s
5 . V _{I H} ( D C ) a n d V _IL ( D C ) a r e l e v e l s t o m a i n t a i n t h e c u r r e n t l o g i c s t a t e .
6 . V _{I H} ( A C ) a n d V _{I L}( A C ) a r e l e v e l s t o c h a n g e t o t h e n e w l o g i c s t a t e .
7. V _ID is magnitude of the difference between CLK input level and C L K input level.
8. The value of Vx(AC) is expected to equal VddQ/2 of the transmitting device.
9 . V _{I S O} m e a n s [ V _{I C K}( C L K ) + V _{I C K}(C L K ) ] / 2
10. Refer to the figure below.
CLK
CLK
V_SS
V _ID ( A C )
V_X
V_{I C K}
V_X
V _ICK
V_X
V_X
V_X
V_{I C K}
V_{I C K}
V _ID(AC)
0 V Differential
V _ISO
V_SS
V _ISO(min)
V_{I S O}(max)
1 1 . I n t h e c a s e o f e x t e r n a l t e r m i n a t i o n , V T T ( T e r m i n a t i o n V o l t a g e ) s h o u l d b e g o n e i n t h e r a n g e o f V _{R E F}( D C ) ± 0 . 0 4 V .
Pin Capacitance (V _DD = 2.5V, V _DDQ = 1.8V, f = 1 MHz, Ta = 25 ^oC )
Symbol
C _IN
C _INC
C _I/O
C _NC
Parameter
Input Pin Capacitance
Clock Pin (CLK, CLK) Capacitance
DQ, DS, QS Capacitance
NC Pin Capacitance
Min
1.5
1.5
2.5
-
Note : These parameters are periodically sampled and not 100% tested.
Max
2.5
2.5
3.5
1.5
Delts
0.25
0.25
0.5
-
Units
pF
pF
pF
pF
-7-
REV. 0.0 Nov. 2002