K4C89363AF Datasheet, PDF (28/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Single Bank Write Timing (CL=6)
CLK
CLK
0
1
Command
Address
WRA
LAL
l_{R C D} =1cycle
UA
LA
2
3
4
5
l_{R C} =7cycles
DESL
l_{R A S}=6cycles
6
7
8
9
10
11
12
13
14
15
WRA
LAL
l_{R C D} =1cycle
UA
LA
l_{R C} =7cycles
DESL
l_{R A S}= 6 c y c l e s
WRA
LAL
l_{R C D} =1cycle
UA
LA
Bank Add.
#0
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
BL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
DQ
(Output)
WL=5
WL=5
WL=5
WL=5
#0
D0 D1
D0 D1 D2 D3
D0 D1
D0 D1 D2 D3
#0
WL=5
D0 D1
WL=5
D0 D1 D2 D 3
WL=5
D0 D1
WL=5
D0 D1 D2 D 3
- 28 -
REV. 0.0 Sep. 2002