K4C89363AF Datasheet, PDF (31/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Single Bank Read-Write Timing (CL=6)
CLK
CLK
Command
0
1
RDA
LAL
2
3
4
5
l_{R C} =7cycles
DESL
6
7
8
9
10
11
12
13
14
15
WRA
LAL
l_{R C} =7cycles
DESL
RDA
LAL
Address
UA
LA
UA
LA
UA
LA
Bank Add.
#0
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
LQS/UQS
(Output)
DQ
(Output)
Hi-Z
CL=6
CL=6
CL=6
CL=6
#0
#0
Q0 Q 1
WL=5
D0 D1
Q0 Q 1 Q2 Q 3
WL=5
D0 D1 D2 D 3
Q0 Q 1
WL=5
D0 D1
Q0 Q 1 Q2 Q 3
Read data
WL=5
D0 D1 D2 D 3
Write data
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REV. 0.0 Sep. 2002