K4C89363AF Datasheet, PDF (10/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
AC Characteristics and Operating Conditions (Notes : 1, 2) (Continued)
Symbol
Parameter
tL _Z
tH _Z
tQ _{P D H}
tPDEX
tT
tF _{P D L}
tR _{E F I}
tPAUSE
IR _C
IRCD
IRAS
IRBD
IRWD
IWRD
IRSC
IPD
IP _{D A}
IP _{D V}
IR _{E F C}
ICKD
ILOCK
Data-out Low Impedance Time from CLK
Data-out High Impedance Time from CLK
Last Output to PD High Hold Time
Power Down Exit Time
Input Transition Time
PD Low Input Window for Self-Refresh Entry
Auto-Refresh Average Interval
Pause Time after Power-up
Random Read/Write Cycle Time
(Applicable to Same Bank)
RDA/WRA to LAL Command Input Delay
(Applicable to Same Bank)
LAL to RDA/WRA Command Input Delay
(Applicable to Same Bank)
Random Bank Access Delay
(Applicable to Other Bank)
LAL following RDA to WRA Delay
(Applicable to Other Bank)
LAL following WRA to RDA Delay
(Applicable to Other Bank)
Mode Register Set Cycle Time
PD Low to Inactive State of Input Buffer
C_L = 4
C_L = 5
C_L = 6
C_L = 4
C_L = 5
C_L = 6
BL = 2
BL = 4
C_L = 4
C_L = 5
C_L = 6
PD High to Active State of Input Buffer
Power down mode valid from REF command
Auto-Refresh Cycle Time
REF Command to Clock Input Disable
at Self-Refresh Entry
C_L = 4
C_L = 5
C_L = 6
C_L = 4
C_L = 5
C_L = 6
DLL Lock-on Time (Applicable to RDA command)
F6
Min
Max
-0.5
-
-
0.5
0
-
0.6
-
0.1
1
-0.5*t _{C K}
5
0.4
3.9
200
-
5
-
6
-
7
-
1
1
4
-
5
-
6
-
2
-
2
-
3
-
1
-
7
-
7
-
7
-
-
2
1
-
19
-
23
-
25
-
19
-
23
-
25
-
I _REFC
-
200
-
FB
Min
Max
-0.5
-
-
0.5
0
-
0.6
-
0.1
1
- 0 . 5 * t_{C K}
5
0.4
3.9
200
-
5
-
6
-
7
-
1
1
4
-
5
-
6
-
2
-
2
-
3
-
1
-
7
-
7
-
7
-
-
2
1
-
19
-
23
-
25
-
19
-
23
-
25
-
I _REFC
-
200
-
F5
Min
Max
-0.6
-
-
0.6
0
-
0.7
-
0.1
1
-0.5*t _CK
5
0.4
3.9
200
-
5
-
6
-
7
-
1
1
4
-
5
-
6
-
2
-
2
-
3
-
1
-
7
-
7
-
7
-
-
2
1
-
19
-
23
-
25
-
19
-
23
-
25
-
IREFC
-
200
-
Units Notes
3, 6, 8
3, 7, 8
3
3
5
us
Cycle
- 10 -
REV. 0.0 Nov. 2002