K4C89363AF Datasheet, PDF (26/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Single Bank Write Timing (CL=4)
CLK
CLK
Command
Address
0
1
2
3
4
5
6
7
8
9
10
11
WRA
LAL
l_{R C D} =1cycle
UA
LA
l_{R C} =5cycles
DESL
l_RAS =4cycles
WRA
LAL
l_{R C D} =1cycle
UA
LA
l_RC =5cycles
DESL
l_RAS =4cycles
WRA
LAL
l_{R C D}=1cycle
UA
LA
12
13
14
15
l_{R C} = 5 c y c l e s
DESL
l_{R A S}=4cycles
WRA
UA
Bank Add.
#0
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
BL =4
LDS/UDS
(Input)
#0
WL=3
D0 D1
LQS/UQS
(Output)
Low
DQ
(Output)
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
WL=3
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
WL=3
LQS/UQS
(Output)
DQ
(Output)
WL=3
D0 D1 D2 D3
D0 D1
D0 D1 D2 D3
#0
#0
WL=3
D0 D1
WL=3
D0 D1
WL=3
D0 D1 D2 D3
WL=3
D0 D1 D2 D3
WL=3
D0 D1
WL=3
D0 D1
WL=3
D0 D1 D2 D3
WL=3
D0 D1 D2 D3
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REV. 0.0 Sep. 2002