K4C89363AF Datasheet, PDF (5/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Block Diagram
CLK
CLK
PD
DLL
CLOCK
BUFFER
CS
COMMAND
FN
DECODER
A0 ~ A14
BA0, BA1
ADDRESS
BUFFER
REFRESH
COUNTER
To Each Block
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
BANK #3
BANK #2
BANK #1
BANK #0
MEMORY
CELL
ARRAY
UPPER ADDRESS
LATCH
LOWER ADDRESS
LATCH
COLUMN DECODER
BURST
COUNTER
WRITE ADDRESS
LATCH
ADDRESS
COMPARATOR
DS
QS
READ
DATA
BUFFER
WRITE
DATA
BUFFER
DQ BUFFER
DQ0 ~ DQ35
Note : The K4C89363AD configuration is 4 Bank of 16384 x 128 x 36 of cell array with the DQ pins numbered DQ0~DQ35.
-5-
REV. 0.0 Nov. 2002