K4C89363AF Datasheet, PDF (16/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Write Timing (Burst Length = 4)
Unidirectional DS/QS mode, Unidirectional DS/Free Running QS mode
0
CK
CK
Input
(Control &
Addresses)
1
2
3
4
t_{C H}
t_{C L}
t_{C K}
t_IS t_{IH L A L( a f t e r R D A )}
CAS latency = 4
LDS/UDS
(Input)
DQ
(Input)
CAS latency = 5
LDS/UDS
(Input)
DQ
(Input)
5
6
7
8
9
10
11
12
13
14
15
16
17
18
t_DQSS
t_{D S P R E S}
t_DSPREH
t_{D S P}
DESL
t_{D S P}
t_DSPSTH
t_{D S S}
t_{D S P} t_{D S P S T}
Preamble
t_{D S P R E} t_{D S}
t_DH
Q0
t_{D S S}
t_{D S}
t_{D S}
t _DH
Postamble
t_{D H}
Q1
Q2
Q3
t_{D Q S S}
t_{D S P R E S}
t_DSPREH
t_{D S P}
t_DSS
t_{D S P}
t_{D S P}
t_{D S S}
t_{D S P S T H}
t_DSPST
Preamble
t_{D S P R E}
t_{D S}
t_{D S}
t _DS
t_{D H}
t _DH
t_{D H}
Q0
Q1
Q2
Q3
Postamble
CAS latency = 6
LDS/UDS
(Input)
DQ
(Input)
t_DQSS
t_{D S P R E S}
t_DSPREH
t_{D S P}
t_{D S S}
t_{D S P}
t_{D S P}
t_{D S S}
t_{D S P S T H}
t_DSPST
Preamble
t_DSPRE
t_{D S}
t_{D H}
t_{D S}
t _DS
t _DH
t_{D H}
Postamble
Q0
Q1
Q2
Q3
LQS/UQS
Low
(Uni-QS)
LQS/UQS
(Free Runninig)
Note : DQ0 to DQ17 are sampled at both edges of LDS.
DQ18 to DQ35 are sampled at both edges of UDS.
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REV. 0.0 Nov. 2002