K4C89363AF Datasheet, PDF (24/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Single Bank Read Timing (CL=5)
CLK
CLK
Command
Address
0
1
RDA
LAL
l_{R C D} =1cycle
UA
LA
2
3
4
l_{R C} =6cycles
DESL
l_{R A S}=5cycles
5
6
7
8
9
10
11
12
13
14
15
RDA
LAL
l_{R C D}=1cycle
UA
LA
l_RC =6cycles
DESL
l_{R A S}=5cycles
RDA
LAL
l_{R C D} =1cycle
UA
LA
DESL
Bank Add.
#0
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
LQS/UQS
(Output)
DQ
(Output)
Hi-Z
CL=5
CL=5
CL=5
CL=5
#0
Q0 Q 1
CL=5
Q0 Q 1 Q2 Q 3
CL=5
Q0 Q 1
CL=5
Q0 Q 1 Q2 Q 3
CL=5
#0
Q0 Q 1
Q0 Q 1 Q2 Q 3
Q0 Q 1
Q0 Q 1 Q2 Q 3
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REV. 0.0 Sep. 2002