K4C89363AF Datasheet, PDF (35/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Multiple Bank Write Timing (CL=4)
CLK
CLK
Command
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
l_{R B D} =2cycles
l_{R B D}=2cycles
l_RBD =2cycles
l_RBD =2cycles
l_{R B D}=2cycles
WRA
LAL
WRA
LAL DESL WRA
LAL
WRA
LAL
WRA
LAL
WRA
LAL
WRA
LAL
WRA
Address
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
Bank Add.
Bank
"a"
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Bank
"b"
Bank
"a"
l_RC (Bank"a")=5cycles
l_{R C}(Bank"b")=5cycles
Bank
"b"
WL=3
WL=3
Da0 Da1
Db0 Db1
Bank
"c"
Bank
"d"
Bank
"a"
Bank
"b"
Da0 Da1
Db0 Db1
Dc0 Dc1
Dd0 Dd1
BL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
WL=3
DQ
(Output)
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
WL=3
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3 Dc0 Dc1 Dc2 Dc3 Dd0 Dd1
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
WL=3
WL=3
Da0 Da1
Db0 Db1
Da0 Da1
Db0 Db1
Dc0 Dc1
Dd0 Dd1
LQS/UQS
(Output)
DQ
(Output)
WL=3
WL=3
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3 Dc0 Dc1 Dc2 Dc3 Dd0 Dd1
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REV. 0.0 Sep. 2002