K4C89363AF Datasheet, PDF (34/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Multiple Bank Read Timing (CL=6)
CLK
CLK
Command
0
1
2
3
l_{R B D} =2cycles
RDA
LAL
RDA
LAL
4
5
6
7
8
9
10
11
12
13
14
15
DESL
l_{R B D}=2cycles
l_RBD =2cycles
l_RBD =2cycles
l_{R B D}=2cycles
RDA
LAL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
Address
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
Bank Add.
Bank
"a"
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Bank
"b"
Bank
"a"
l_{R C} (Bank"a")=7cycles
l_{R C} ( B a n k " a " ) = 7 c y c l e s
Bank
"b"
Bank
"c"
CL=6
CL=6
Qa0 Qa1
Qb0 Qb1
Bank
"d"
Bank
"a"
Q a 0 Qa1
BL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
CL=6
CL=6
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
Qa0 Qa1 Qa2
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
CL=6
CL=6
Qa0 Qa1
Qb0 Qb1
Q a 0 Qa1
LQS/UQS
(Output)
DQ
(Output)
Hi-Z
CL=6
CL=6
Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3
Qa0 Qa1 Qa2
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REV. 0.0 Sep. 2002