K4C89363AF Datasheet, PDF (58/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
General Information
Organization
288M(x32)
288M(x36)
F6 (667Mbps)
K4C89323AF-GCF6
K4C89363AF-GCF6
FB (600Mbps )
K4C89323AF-GCFB
K4C89363AF-GCFB
F5 (500Mbps )
K4C89323AF-GCF5
K4C89363AF-GCF5
12
3
4
5
6
7
8
K 4 C XX XX X X X
9 10 11
- X X XX
Memory
DRAM
Small Classification
Density and Refresh
Organization
Bank
Speed
Temperature & Power
Package
Version
Interface (VDD & VDDQ)
1. SAMSUNG Memory : K
2. DRAM : 4
3. Small Classification
C : Network-DRAM
4. Density & Refresh
89 : 288M 8K/32ms
5. Organization
32 : x32
36 : x36
6. Bank
3 : 4 Bank
7. Interface (VDD & VDDQ)
A: SSTL-2(2.5V, 1.8V)
8. Version
F : 7th Generation
9. Package
T : TSOP II (400mil x 875mil)
G : 144 FBGA
10. Temperature & Power
C : (Commercial, Normal)
11. Speed
F6 : 667Mbps/pin (333MHz, CL=6)
FB : 600Mbps /pin (300MHz, CL=6)
F5 : 500Mbps/pin (250MHz, CL=6)
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REV. 0.0 Nov. 2002