K4C89363AF Datasheet, PDF (40/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Write with Variable Write Length (VW) Control(CL=4)
CLK
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
CLK
BL=2, SEQUENTIAL MODE
Command
WRA
LAL
DESL
WRA
LAL
DESL
Address
Bank Add.
UA
Bank
"a"
LA=#3
VW=All
VW0 = Low
VW1 = don’t care
UA
Bank
"a"
LA=#1
VW=1
VW0 = High
VW1 = don’t care
LDS/UDS
(Input)
LQS/UQS
(Input)
D0 D1
Lower Address #3 #2
BL=4, SEQUENTIAL MODE
Command
WRA
LAL
DESL
WRA
LAL
D0
#1 (#0)
Last one data is masked.
DESL
WRA
LAL
DESL
Address
Bank Add.
UA
Bank
"a"
LA=#3
VW=All
VW0 = High
VW1 = Low
UA
Bank
"a"
LA=#1
VW=1
VW0 = High
VW1 = High
UA
Bank
"a"
LA=#2
VW=2
VW0 = Low
VW1 = High
LDS/UDS
(Input)
LQS/UQS
(Input)
D0 D1 D2 D3
D0
Lower Address #3 #0 #1 #2
#1 (#2) (#3) (#0)
Last three data are masked.
Note : DS input must be continued till end of burst count even if some of laster data is masked.
D0 D1
#2 #3 (#0) (#1)
Last two data are masked.
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REV. 0.0 Sep. 2002