K4C89363AF Datasheet, PDF (15/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Read Timing (Burst Length = 4)
Unidirectional DS/Free Running QS mode
0
1
2
3
4
5
6
7
t_{C H}
t_{C L}
t_{C K}
CK
CK
Input
(Control &
Addresses)
t_IS t_{IH L A L( a f t e r R D A )}
LDS/UDS
(Input)
CAS latency = 4
LQS/UQS
(Output)
DQ
(Output)
High-Z
8
9
10
11
12
13
14
15
16
17
18
DESL
t_{C K Q S}
t_CKQS
t_QSP
t_{C K Q S}
t_{Q S P}
t _LZ
t_QSQV
t_{Q S Q}
t_QSQ t_QSQV
Q0
t_{A C}
Q1
t_{A C}
Q2
t_{A C}
t_QSQ
t _HZ
Q3
t_OH
CAS latency = 5
LQS/UQS
(Output)
DQ
(Output)
High-Z
t_{C K Q S}
t_{C K Q S}
t_QSP
t_{C K Q S}
t_QSP
t_{L Z}
t_QSQV
t_{Q S Q}
t_QSQ
t_{Q S Q V}
Q0
t_{A C}
Q1
t_{A C}
Q2
t_{A C}
t_QSQ
t_HZ
Q3
t_OH
CAS latency = 6
LQS/UQS
(Output)
DQ
(Output)
High-Z
Note : DQ0 to DQ17 are aligned with LQS.
DQ18 to DQ35 are aligned with UQS.
LQS/UQS is always asserted in Free Running QS mode.
- 15 -
t_{C K Q S}
t_{C K Q S}
t_{Q S P}
t_CKQS
t_{Q S P}
t_{L Z}
t_{Q S Q V}
t_QSQ
t_{Q S Q} t_{Q S Q V}
Q0
t _AC
Q1
t_{A C}
Q2
t _AC
t_{Q S Q}
t_{H Z}
Q3
t_{O H}
REV. 0.0 Nov. 2002