K4C89363AF Datasheet, PDF (32/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Multiple Bank Read Timing (CL=4)
CLK
CLK
Command
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
l_{R B D} =2cycles
RDA
LAL
RDA
l_{R B D}=2cycles
l_RBD =2cycles
l_RBD =2cycles
l_{R B D}=2cycles
LAL DESL RDA
LAL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
LAL
RDA
Address
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
LA
UA
Bank Add.
Bank
"a"
Unidirectional DS/QS mode
BL =2
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Bank
"b"
Bank
"a"
l_RC (Bank"a")=5cycles
l_{R C}(Bank"a")=5cycles
CL=4
CL=4
Qa0 Qa1
Bank
"b"
Qb0 Qb1
Bank
"c"
Bank
"d"
Bank
"a"
Qa0 Qa1
Qb0 Qb1
Bank
"b"
Qc0 Qc1
BL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
Low
DQ
(Output)
Hi-Z
Unidirectional DS/Free Running QS mode
BL =2
LDS/UDS
(Input)
CL=4
CL=4
Qa0 Qa1 Qa2Qa3 Qb0 Qb1 Qb2 Qb3
Qa0 Qa1 Q a 2 Qa3 Q b 0 Qb1 Q b 2 Qb3 Qc0 Qc1 Qc2
LQS/UQS
(Output)
DQ
(Output)
BL =4
LDS/UDS
(Input)
Hi-Z
CL=4
CL=4
Qa0 Qa1
Qb0 Qb1
Qa0 Qa1
Qb0 Qb1
Qc0 Qc1
LQS/UQS
(Output)
DQ
(Output)
Hi-Z
CL=4
CL=4
Qa0 Qa1 Qa2Qa3 Qb0 Qb1 Qb2 Qb3
Qa0 Qa1 Q a 2 Qa3 Q b 0 Qb1 Q b 2 Qb3 Qc0 Qc1 Qc2
Note : l_{R C} to the same bank must be satisfied
- 32 -
REV. 0.0 Sep. 2002