K4C89363AF Datasheet, PDF (38/58 Pages) Samsung semiconductor – 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM

K4C89363AF
Multiple Bank Read-Write Timing (BL=2)
CLK
CLK
Command
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
l_{R B D} =2cycles
WRA
LAL
RDA
LAL DESL WRA
LAL
RDA
LAL
DESL WRA
LAL
RDA
LAL
DESL WRA
Address
Bank Add.
UA
LA
UA
LA
Bank
"a"
Bank
"b"
Unidirectional DS/QS mode
CL =4
LDS/UDS
(Input)
LQS/UQS
(Output)
DQ
(Output)
CL =5
LDS/UDS
(Input)
Low
Hi-Z
WL=3
LQS/UQS
(Output)
DQ
(Output)
CL =6
LDS/UDS
(Input)
Low
Hi-Z
WL=4
LQS/UQS
(Output)
Low
Hi-Z
DQ
(Output)
Unidirectional DS/Free Running QS mode
CL =4
LDS/UDS
(Input)
WL=5
UA
LA
UA
LA
Bank
"c"
l_{R C} (Bank"a")
Bank
"d"
l_{R C} (Bank"a")
UA
LA
UA
LA
Bank
"a"
Bank
"b"
UA
Bank
"c"
CL=4
Da0 Da1
Qb0Qb1
Dc0 Dc1
Qd0 Qd1
Da0 Da1
CL=5
Da0 Da1
Qb0 Qb1
Dc0 Dc1
Qd0 Qd1
Da0 Da1
CL=6
Da0 Da1
Q b 0 Qb1
Dc0 Dc1
Qd0 Qd1
LQS/UQS
(Output)
DQ
(Output)
CL =5
LDS/UDS
(Input)
Hi-Z
WL=3
CL=4
Da0 Qa1
Qb0Qb1
Dc0 Qc1
Qd0 Qd1
Da0 Da1
LQS/UQS
(Output)
DQ
(Output)
CL =6
LDS/UDS
(Input)
Hi-Z
WL=4
CL=5
Da0 Da1
Qb0 Qb1
Dc0 Dc1
Qd0 Qd1
Da0 Da1
LQS/UQS
(Output)
DQ
(Output)
Hi-Z
WL=5
N o t e : I_{R C} t o t h e s a m e b a n k m u s t b e s a t i s f i e d .
CL=6
Da0 Da1
Q b 0 Qb1
Dc0 Dc1
Qd0 Qd1
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REV. 0.0 Sep. 2002