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| NP8P128A13BSM60E Datasheet, PDF (71/92 Pages) Numonyx B.V – 128-Mbit Parallel Phase Change Memory | |||
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Numonyx® Omneo⢠P8P Datasheet
17.0 Program and Erase Characteristics
Table 32: Program and Erase Specification
Operation(1)
Symbol
Parameter
Description
Erasing and Suspending
Erase to Suspend
W602 3
tERS/SUSP
Erase Time
W500
W501
tERS/PB
tERS/MB
Suspend Latency
W600
W601
tSUSP/P
tSUSP/E
Conventional Word Programming
Program Time(6)
W200
tPROG/W
Buffered Programming
W200
tPROG/W
Program Time
W250
tPROG/PB
Erase or Erase-Resume
command to Erase-suspend
command
16-KW Parameter
64-KW Main
Write suspend
Erase suspend
Single word
Single word
(Legacy Program & Bit-
alterable Write)
One Buffer (64 Bytes/32
words)
(Legacy Program & Bit-
alterable Write)
One Buffer (64 Bytes/32
words)
(Program on all 1s)
VPPL(4,5)
Min Typ Max
500
100 200
400 800
35
60
35
60
60
120
5
120 240
120 360
4,5
71
280
Unit
µs
ms
µs
µs
µs
µs
Notes:
1.
Typical values measured at TA = +25 °C, typical voltages and 50% data pattern per word. Excludes system overhead.
Performance numbers are valid for all speed versions. Sampled, but not 100% tested.
2.
Averaged over entire device.
3.
W602 is the minimum time between an initial block erase or erase resume command and the a subsequent erase suspend
command. Violating the specification repeatedly during any particular block erase may cause erase failures in flash
devices. This specification is required if the designer wishes to maintain compatibility with the P33 NOR flash device.
However, it is not required with PCM.
4.
These performance numbers are valid for all speed versions.
5.
Sampled, not 100% tested.
July 2010
316144-07
71
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