NP8P128A13BSM60E Datasheet, PDF (55/92 Pages) Numonyx B.V – 128-Mbit Parallel Phase Change Memory

Numonyx® Omneo™ P8P Datasheet
12.4.9 Sector erase (SE)
The sector erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector.
Before it can be accepted, a write enable (WREN) instruction must previously have
been executed. After the write enable (WREN) instruction has been decoded, the device
sets the write enable latch (WEL).
The sector erase (SE) instruction is entered by driving Chip Select (S#) Low, followed
by the instruction code, and three address bytes on serial data input (DQ0). Any
address inside the sector is a valid address for the sector erase (SE) instruction. Chip
Select (S#) must be driven Low for the entire duration of the sequence.
Chip Select (S#) must be driven High after the eighth bit of the last address byte has
been latched in, otherwise the sector erase (SE) instruction is not executed. As soon as
Chip Select (S#) is driven High, the self-timed sector erase cycle (whose duration is
t_SE) is initiated. While the sector erase cycle is in progress, the status register may be
read to check the value of the write in progress (WIP) bit. The write in progress (WIP)
bit is 1 during the self-timed sector erase cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the write enable latch (WEL) bit is
reset. RDSR is the only instruction accepted while device is busy with erase operation;
all other instructions are ignored.
A sector erase (SE) instruction applied to a page which is protected by the block protect
(BP3, BP2, BP1, BP0) bits is not executed.
Figure 17: Sector erase (SE) instruction sequence
S
C
DQ1
0123456789
29 30 31
Instruction
24-bit address (1)
23 22
MSB
210
AI13742b
July 2010
316144-07
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