NP8P128A13BSM60E Datasheet, PDF (61/92 Pages) Numonyx B.V – 128-Mbit Parallel Phase Change Memory

Numonyx® Omneo™ P8P Datasheet
15.2
DC Voltage Characteristics
Table 27: DC Voltage Characteristics
Sym
Parameter
Notes
CMOS Inputs
V_CCQ
1.7v - 3.6v
TTL Inputs
V_CCQ
2.4v - 3.6v
Unit
Test Condition
Min
Max
Min
Max
V_IL
Input Low
V_IH
Input High
V_OL
Output Low
V_OH
Output High
V_PPLK
V_LKO
V_LKOQ
V_PP Lock-Out
V_CC Lock
V_CCQ Lock
8
0
0.4
0
0.6
V
8
V_CCQ – 0.4
V_CCQ
2.0
V_CCQ
V
V_CC = V_CCMIN
0.1
0.1
V V_CCQ = V_CCQMIN
I_OL = 100 µA
V_CCQ – 0.1
V_CCQ – 0.1
V_CC = V_CCMIN
V V_CCQ = V_CCQMIN
I_OH = –100 µA
7
0.4
0.4
V
1.5
1.5
V
0.9
0.9
V
Notes:
1.
2.
All currents are
See Section ,
RMS unless noted.
“” on page 57
Typical values
for details.
at
typical
V_CC,
T_A
=
+25°C.
3.
Sampled, not 100% tested.
4.
V_CC read + write current is the sum of V_CC read and V_CC write currents.
5.
V_CC read + erase current is the sum of V_CC read and V_CC erase currents.
6.
I_CCES is specified with device deselected. If device is read while in erase suspend, current is I_CCES plus I_CCR.
7.
V_PP <= V_PPLK inhibits erase and write operations. Don’t use V_PP outside the valid range.
8.
V_IL can undershoot to –1.0V for durations of 2 ns or less and V_IH can overshoot to V_CCQ(MAX)+1.0V for durations of 2 ns or
less.
9.
If V_IN>V_CC the input load current increases to 10 µA max.
10.
I_CCRQ is the output component of read current drawn from V_CC, not V_CCQ.
11.
12.
I_CCS is the average current measured over any
C^ICh^CWa^,r^Ia^Cc^CEte^mr^eis^at^si^uc^rs^e”^d
over typical or
on page 71
max
times
5ms time interval 5µs after a
specified in Section 17.0,
CE# deassertion.
“Program and
Erase
July 2010
316144-07
61