M16C Datasheet, PDF (211/262 Pages) Mitsubishi Electric Semiconductor – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

Preliminary Specifications REV.B
Specifications in this manual are tentative and subject to change.
Mitsubishi microcomputers
M16C / 6N Group
Flash Chip Memory Description
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Outline Performance
Table 22-1 shows the outline performance of the M16C/6N (with on-chip flash memory).
Table 22-1. Outline performance of the M16C/6N (with on-chip flash memory)
Item
Power supply voltage
Performance
5V version: 4.5 to 5.5 V
(f(XIN)=16MHz, without wait, 4.2 to 5.5V)
Program/erase voltage
5V version: 4.5 to 5.5 V
(f(XIN)=12.5MHz, with one wait)
Flash memory mode
Three modes (parallel I/O, standard serial I/O, CPU
rewrite)
Erase block
division
User ROM area
Boot ROM area
Program method
Erase method
Program/erase control method
Protect method
Number of commands
Program/erase count
See Figure 22-3.
One division (8 Kbytes) (Note 1)
In units of pages (in units of 256 bytes)
Collective erase/block erase
Program/erase control by software command
Protected for each block by lock bit
8 commands
100 times
ROM code protect
Parallel I/O and standard serial modes are supported.
Note 1: The boot ROM area contains a standard serial I/O mode control program which is stored in it
when shipped from the factory. This area can be erased and programmed in only parallel I/O
mode.
Table 22-2. Power supply current (typ.) of the M16C/6N (flash memory version)
Parameter
Measuring condition
Standard (Typ.)
Read Program Erase
Remark
5 V power supply current (5 V version) f(Xin)=16 MHz, without wait, no division 35 mA 28 mA 25 mA Division by 4 in program/erase
211