PIC18F67J11T-I Datasheet, PDF (414/466 Pages) Microchip Technology – 64/80-Pin, High-Performance, 1-Mbit Flash Microcontrollers

PIC18F87J11 FAMILY
TABLE 28-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Program Flash Memory
D130 EP Cell Endurance
10K
—
— E/W -40C to +85C
D131 VPR VDD for Read
VMIN
—
3.6
V VMIN = Minimum operating
voltage
D132B VPEW Voltage for Self-Timed Erase or Write:
VDD
2.35
—
3.6
V ENVREG tied to VDD
VDDCORE
2.25
—
2.7
V ENVREG tied to VSS
D133A TIW Self-Timed Write Cycle Time
—
2.8
—
ms
Self-Timed Page Erase Cycle Time
—
33.0
—
ms
D134 TRETD Characteristic Retention
20
—
— Year Provided no other
specifications are violated
D135 IDDP Supply Current During Programming —
3
14 mA
D1xxx TWE Writes per Erase Cycle
—
—
1
For each physical address
† Data in “Typ” column is at 3.3V, +25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
DS39778E-page 414
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