HYB25D512800BT Datasheet, PDF (9/90 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM

512Mbit Double Data Rate SDRAM
DDR SDRAM
HYB25D512[40/80/16]0B[C/T]
HYB25D512[40/80/16]0B[E/F]
1
Overview
1.1
Features
• Double data rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the
receiver
• DQS is edge-aligned with data for reads and is center-aligned with data for writes
• Differential clock inputs (CK and CK)
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Burst Lengths: 2, 4, or 8
• CAS Latency: (1.5), 2, 2.5, 3
• Auto Pre charge option for each burst access
• Auto Refresh and Self Refresh Modes
• 7.8 µs Maximum Average Periodic Refresh Interval
• 2.5 V (SSTL_2 compatible) I/O
• V_DDQ = 2.5 V ± 0.2 V and 2.6 V ± 0.1 V for DDR400
• V_DD = 2.5 V ± 0.2 V and 2.6 V ± 0.1 V for DDR400
• P-TFBGA-60 and P-TSOPII-66 package
Table 1 Performance
Product Type Speed Code
Speed Grade
max. Clock Frequency
@CL3
@CL2.5
@CL2
f_CK3
f_CK2.5
f_CK2
-5
DDR400B
200
166
133
-6
DDR333B
166
166
133
-7
DDR266A
143
143
133
Unit
–
MHz
MHz
MHz
Data Sheet
9
Rev. 1.2, 2004-06