HYB25D512800BT Datasheet, PDF (87/90 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM

HYB25D512[40/16/80]0B[E/F/C/T]
512Mbit Double Data Rate SDRAM
System Characteristics for DDR SDRAMs
1) The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire
temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown
drivers due to process variation.
2) DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal
transitions through the DC region must be monotonic
Output
Figure 52 Pullup slew rate test load
V_DDQ
50 Ω
Test point
MPBD1990
Output
Figure 53 Pulldown slew rate test load
Test point
50 Ω
V_SSQ
MPBD2000
Data Sheet
87
Rev. 1.2, 2004-06
08122003-RMYD-6BJP