HYB25D512800BT Datasheet, PDF (54/90 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM

HYB25D512[40/16/80]0B[E/F/C/T]
512Mbit Double Data Rate SDRAM
Functional Description
3.5.4 Pre charge
The Pre charge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access some specified time (t_RP) after the Pre charge command is
issued. Input A10 determines whether one or all banks are to be pre charged, and in the case where only one bank
is to be pre charged, inputs BA0, BA1 select the bank. When all banks are to be pre charged, inputs BA0, BA1 are
treated as “Don’t Care”. Once a bank has been pre charged, it is in the idle state and must be activated prior to
any Read or Write commands being issued to that bank.
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
A0-A9, A11, A12
A10
BA0, BA1
All Banks
One Bank
BA
BA = bank address
(if A10 is Low, otherwise Don’t Care).
Don’t Care
Figure 30 Precharge Command
Data Sheet
54
Rev. 1.2, 2004-06