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| HYB25D512800BT Datasheet, PDF (62/90 Pages) Infineon Technologies AG – 512Mbit Double Data Rate SDRAM | |||
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HYB25D512[40/16/80]0B[E/F/C/T]
512Mbit Double Data Rate SDRAM
Electrical Characteristics
Electrical Characteristics and DC Operating Conditions
Parameter
Symbol
Values
Min.
Typ.
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
Supply Voltage, I/O Supply
Voltage
Input Reference Voltage
VDD
VDD
VDDQ
VDDQ
VSS,
VSSQ
VREF
I/O Termination Voltage VTT
(System)
2.3
2.5
2.5
2.6
2.3
2.5
2.5
2.6
0
0.49 Ã
0.5 Ã
VDDQ
VDDQ
VREF â 0.04
Input High (Logic1) Voltage VIH(DC)
Input Low (Logic0) Voltage VIL(DC)
Input Voltage Level,
CK and CK Inputs
VIN(DC)
VREF + 0.15
â0.3
â0.3
Input Differential Voltage, VID(DC) 0.36
CK and CK Inputs
VI-Matching Pull-up
Current to Pull-down
Current
VIRatio 0.71
Input Leakage Current
II
â2
Output Leakage Current IOZ
â5
Output High Current,
IOH
â
Normal Strength Driver
Output Low
IOL
16.2
Current, Normal Strength
Driver
Max.
2.7
2.7
2.7
2.7
0
Unit Note/Test Condition 1)
V fCK ⤠166 MHz
V fCK > 166 MHz 2)
V fCK ⤠166 MHz 3)
V fCK > 166 MHz 2)3)
Vâ
0.51 Ã
V 4)
VDDQ
VREF + 0.04 V 5)
VDDQ + 0.3 V 6)
VREF â 0.15 V 6)
VDDQ + 0.3 V 6)
VDDQ + 0.6 V 6)7)
1.4
â 8)
2
5
â16.2
â
µA Any input 0 V ⤠VIN ⤠VDD;
All other pins not under test
= 0 V 9)
µA DQs are disabled;
0 V ⤠VOUT ⤠VDDQ 9)
mA VOUT = 1.95 V
mA VOUT = 0.35 V
1) 0 °C ⤠TA ⤠70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V; VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V (DDR400);
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, VDDQ must be less than or equal to VDD.
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ.
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in the DC level of VREF.
6) Inputs are not recognized as valid until VREF stabilizes.
7) VID is the magnitude of the difference between the input level on CK and the input level on CK.
8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
9) Values are shown per pin.
Data Sheet
62
Rev. 1.2, 2004-06
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