HD404669 Datasheet, PDF (131/142 Pages) Hitachi Semiconductor – Low-Voltage AS Microcomputers with On-Chip DTMF Generation Circuit

HD404669 Series
I/O Characteristics for High-Current (HD404668, HD4046612, HD404669, HD40A4668,
HD40A46612, HD40A4669: V_CC = 1.8 to 5.5 V, GND = 0 V, T_a = –20°C to +75°C;
HCD404669: V_CC = 1.8 to 5.5 V, GND = 0 V, T_a = +75°C; HD407A4669: V_CC = 2.2 to 5.5 V, GND = 0
V, T_a = –20°C to +75°C, unless otherwise specified)
Item
Input high
voltage
Input low
voltage
Output high
voltage
Symbol
V_IH
V_IL
V_OH
Pin(s)
D₀ to D₅, D₉ to
D₁₁
D₀ to D₅, D₉ to
D₁₁
D₀ to D₅, D₉ to
D₁₁
D₀ to D₃
Min
0.7V_CC
–0.3
V_CC – 0.5
V_CC – 2.0
Output low
voltage
V_OL
D₀ to D₅, D₉ to —
D₁₁
I/O leakage
current
I_{I L}
D₄, D₅, D₉ to
—
D₁₁
D₀ to D₅, D₉ to —
D₁₁
Pull-up MOS
–I_PU
D₄, D₅, D₉ to
10
current
D₁₁
Pull-down MOS I_PD
D₀ to D₃
10
current
Note: 1. Output buffer current is excluded.
Typ Max
— V_CC + 0.3
— 0.3V_CC
——
——
— 0.4
— 2.0
—1
50 150
50 150
Unit Test Condition
V
—
V
—
V
–I_OH = 0.3 mA
V
–I_OH = 10 mA
V_CC = 4.5V to 5.5V
V
I_OL = 0.4 mA
V
I_OL = 15 mA,
V_CC = 4.5 V to 5.5 V
µA
V_in = 0 V to V_CC
µA
V_CC = 3 V,
V_in = 0 V
µA
V_CC = 3 V,
V_in = 3 V
Notes
1
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