HD404669 Datasheet, PDF (109/142 Pages) Hitachi Semiconductor – Low-Voltage AS Microcomputers with On-Chip DTMF Generation Circuit

Programming Electrical Characteristics
HD404669 Series
DC Characteristics (V_CC = 6.0 V ± 0.25 V, V_PP = 12.5 V ± 0.3 V, GND = 0V, T_a = 25°C ± 5°C, unless
otherwise specified)
Item
Input high
voltage level
Input low
voltage level
Output high
voltage level
Output low
voltage level
Input leakage
current
V_CC current
V_PP current
Pin(s)
O₀–O₄, A₀–A₁₄,
OE, CE
O₀–O₄, A₀–A₁₄,
OE, CE
O₀–O₄
Symbol
V_IH
V_IL
V_OH
Min
2.2
–0.3
2.4
O₀–O₄
V_OL
—
O₀–O₄, A₀–A₁₄, I_IL
—
OE, CE
I _CC
—
I_PP
—
Typ Max
Unit Test Condition
—
V_CC + 0.3 V
—
0.8
V
—
—
—
0.4
—
2
—
30
—
40
V
I_OH = –200 µA
V
I_OL = 1.6 mA
µA V_in = 5.25 V/0.5 V
mA
mA
AC Characteristics (V_CC = 6.0 V ± 0.25 V, V_PP = 12.5 V ± 0.3 V, GND = 0V, T_a = 25°C ± 5°C, unless
otherwise specified)
Item
Symbol Min
Address setup time
OE setup time
Data setup time
Address hold time
Data hold time
Data output disable time
V_PP setup time
Program pulse width
CE pulse width during
overprogramming
t_AS
t_OES
t_DS
t_AH
t_DH
t_DF
t_VPS
t_PW
t_OPW
2
2
2
0
2
—
2
0.95
2.85
V_CC setup time
t_VCS
2
Data output delay time
t_OE
0
Note: Input pulse level: 0.8 V to 2.2 V
Input rise/fall time: ≤ 20 ns
Input timing reference levels: 1.0 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Typ Max
—
—
—
—
—
—
—
—
—
—
—
130
—
—
1.0
1.05
—
78.75
—
—
—
500
Unit Test Condition
µs See figure 82
µs
µs
µs
µs
ns
µs
ms
ms
µs
ns
109